Senior Director, R&D Engineering

onsemi is seeking a visionary and accomplished technology leader to serve as Leader of Lateral GaN Technology. This role will lead the development of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) power switching devices and drivers across industrial, cloud/data center, and automotive markets. The ideal candidate brings deep technical expertise, strategic foresight, and a proven ability to lead global engineering teams through innovation and execution.

Responsibilities

• GaN Device, Product, and Technology Development across 650V and 100V process nodes.
• Collaborate with test, reliability, and project management teams to define and drive Test Plans, Reliability Plans, and development schedules.
• Assess market-specific product requirements and balance IC implementation risk with customer timelines and business objectives.
• Direct the definition, development, and production release of GaN Power ICs and discrete devices.
• Partner with global foundries to develop custom GaN processes, with a long-term strategy to bring processes in-house.
• Serve as lead IC designer for GaN integrated and discrete products.
• Develop target datasheets, conduct device/process simulations, and perform electrical characterization.
• Ensure application fit, reliability, and robustness of GaN HEMT devices.
• Collaborate with the Packaging team to innovate next-generation packaging solutions.
• Build and maintain strong cross-functional relationships across R&D, operations, and business units.
• Lead technology development projects from concept through high-volume manufacturing.

Qualifications & Expertise

• Proven semiconductor executive with a track record of building and leading high-performing, advanced technology teams.
• 20+ years of experience in GaN technology, spanning epitaxy, process integration, product design, and high-volume manufacturing. Experience in IC design.
• Hands-on leader with strengths in strategic planning, budget management, and technology roadmap execution.
• Passionate about mentorship and talent development.
• Strong entrepreneurial mindset, critical thinking, and rapid learning ability.
• Deep expertise in GaN HEMT device physics, structure, and electrical operation.
• Experience in fab processes, packaging, TCAD simulations, and layout tools.
• Skilled in electrical characterization, failure analysis, and accelerated reliability testing.
• Excellent analytical, communication, and leadership skills.
• Comfortable working in multinational, cross-functional, and culturally diverse environments.
• Master’s or PhD in Electrical Engineering, Physics, Materials Science, or a related field.

onsemi is excited to share the base salary range for this position is $210,450 - $378,810 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package. https://www.onsemi.com/careers/career-benefits

onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.

More details about our company benefits can be found here:

https://www.onsemi.com/careers/career-benefits