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Senior MTS Design Engineer

onsemi

184k - 331k USD/year

Office

San Jose, CA, United States

Full Time

onsemi is seeking a highly experienced and innovative Design Engineer to lead the development of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) power switching devices. This role supports cutting-edge applications across industrial, cloud/data center, and automotive sectors, and involves close collaboration with customers to deliver optimized solutions using device drivers and application-level integration.

  • Define IC architecture and design strategies aligned with market application requirements, balancing implementation risk, customer timelines, and profitability.
  • Lead IC design efforts for both integrated and discrete GaN products.
  • Develop and maintain target datasheets and technical documentation for new products.
  • Perform device and process simulations; conduct comprehensive electrical characterization.
  • Evaluate product suitability for target applications and ensure performance benchmarks are met.
  • Design and execute test plans for power GaN HEMT devices.
  • Troubleshoot device-related issues and propose innovative solutions.
  • Assess and enhance reliability and robustness of GaN HEMT devices.
  • Collaborate with Packaging and Reliability teams to develop advanced packaging and testing methodologies.
  • Work directly with customers to understand application requirements, provide technical support, and deliver tailored solutions using device drivers and reference designs.
  • Support field applications engineers and sales teams with technical insights and product demonstrations.
  • Foster strong cross-functional relationships across engineering, manufacturing, and business units.
  • Deep expertise in GaN HEMT device physics, structure, and electrical behavior.
  • Proven experience in fab processes and packaging for power semiconductor technologies.
  • Proficiency in TCAD simulations and layout tools.
  • Strong background in electrical characterization and testing of power semiconductor devices.
  • Understanding of degradation mechanisms and failure analysis in GaN HEMTs.
  • Familiarity with accelerated reliability testing methodologies.
  • 15+ years of experience in power semiconductor design, including process integration and device fabrication.
  • Experience working directly with customers or field teams to support application-level integration.
  • Exceptional analytical and problem-solving skills.
  • Excellent communication skills—verbal, written, and interpersonal.
  • Comfortable working in multinational, cross-functional, and culturally diverse teams.
  • Highly self-motivated, accountable, and committed to continuous improvement.
  • Advanced degree (Master’s or PhD) in Electrical Engineering, Physics, Materials Science, or a related field.

 

onsemi is excited to share the base salary range for this position is $184,000 - $331,200 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package. https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf 

 

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onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.

More details about our company benefits can be found here:

https://www.onsemi.com/careers/career-benefits

Senior MTS Design Engineer

Office

San Jose, CA, United States

Full Time

184k - 331k USD/year

August 5, 2025

company logo

onsemi

onsemi