Senior MTS Design Engineer
onsemi
184k - 331k USD/year
Office
San Jose, CA, United States
Full Time
onsemi is seeking a highly experienced and innovative Design Engineer to lead the development of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) power switching devices. This role supports cutting-edge applications across industrial, cloud/data center, and automotive sectors, and involves close collaboration with customers to deliver optimized solutions using device drivers and application-level integration.
- Define IC architecture and design strategies aligned with market application requirements, balancing implementation risk, customer timelines, and profitability.
- Lead IC design efforts for both integrated and discrete GaN products.
- Develop and maintain target datasheets and technical documentation for new products.
- Perform device and process simulations; conduct comprehensive electrical characterization.
- Evaluate product suitability for target applications and ensure performance benchmarks are met.
- Design and execute test plans for power GaN HEMT devices.
- Troubleshoot device-related issues and propose innovative solutions.
- Assess and enhance reliability and robustness of GaN HEMT devices.
- Collaborate with Packaging and Reliability teams to develop advanced packaging and testing methodologies.
- Work directly with customers to understand application requirements, provide technical support, and deliver tailored solutions using device drivers and reference designs.
- Support field applications engineers and sales teams with technical insights and product demonstrations.
- Foster strong cross-functional relationships across engineering, manufacturing, and business units.
- Deep expertise in GaN HEMT device physics, structure, and electrical behavior.
- Proven experience in fab processes and packaging for power semiconductor technologies.
- Proficiency in TCAD simulations and layout tools.
- Strong background in electrical characterization and testing of power semiconductor devices.
- Understanding of degradation mechanisms and failure analysis in GaN HEMTs.
- Familiarity with accelerated reliability testing methodologies.
- 15+ years of experience in power semiconductor design, including process integration and device fabrication.
- Experience working directly with customers or field teams to support application-level integration.
- Exceptional analytical and problem-solving skills.
- Excellent communication skills—verbal, written, and interpersonal.
- Comfortable working in multinational, cross-functional, and culturally diverse teams.
- Highly self-motivated, accountable, and committed to continuous improvement.
- Advanced degree (Master’s or PhD) in Electrical Engineering, Physics, Materials Science, or a related field.
onsemi is excited to share the base salary range for this position is $184,000 - $331,200 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package. https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf
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onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.More details about our company benefits can be found here:
Senior MTS Design Engineer
Office
San Jose, CA, United States
Full Time
184k - 331k USD/year
August 5, 2025